onsemi QFET N-Channel MOSFET, 19 A, 200 V, 3-Pin TO-220F FQPF19N20C
- RS Stock No.:
- 145-4534
- Mfr. Part No.:
- FQPF19N20C
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 50 units)*
£40.15
(exc. VAT)
£48.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 550 unit(s) shipping from 20 October 2025
- Plus 999,999,400 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.803 | £40.15 |
| 100 + | £0.755 | £37.75 |
*price indicative
- RS Stock No.:
- 145-4534
- Mfr. Part No.:
- FQPF19N20C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220F | |
| Series | QFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 170 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 43 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 40.5 nC @ 10 V | |
| Length | 10.16mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.7mm | |
| Height | 9.19mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220F | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 170 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 43 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 40.5 nC @ 10 V | ||
Length 10.16mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 4.7mm | ||
Height 9.19mm | ||
Minimum Operating Temperature -55 °C | ||
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.