onsemi PowerTrench N-Channel MOSFET, 5 A, 150 V, 3-Pin TO-220AB FDP2552
- RS Stock No.:
- 145-4516
- Mfr. Part No.:
- FDP2552
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£56.80
(exc. VAT)
£68.15
(inc. VAT)
FREE delivery for orders over £50.00
- 200 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £1.136 | £56.80 |
100 + | £1.068 | £53.40 |
*price indicative
- RS Stock No.:
- 145-4516
- Mfr. Part No.:
- FDP2552
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 5 A | |
Maximum Drain Source Voltage | 150 V | |
Package Type | TO-220AB | |
Series | PowerTrench | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 36 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 150 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 39 nC @ 10 V | |
Width | 4.83mm | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Height | 9.4mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type TO-220AB | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 36 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 39 nC @ 10 V | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.