Toshiba N-Channel MOSFET, 3.5 A, 600 V, 3-Pin TO-220SIS TK4A60DA(STA4,Q,M)

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
144-5232
Mfr. Part No.:
TK4A60DA(STA4,Q,M)
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.4V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

35 W @ 25 °C

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Length

10mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Width

4.5mm

Height

15mm

Forward Diode Voltage

-1.7V

COO (Country of Origin):
JP


MOSFET Transistors, Toshiba