ROHM BSM Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C BSM300D12P2E001
- RS Stock No.:
- 144-2260
- Mfr. Part No.:
- BSM300D12P2E001
- Brand:
- ROHM
Subtotal (1 unit)*
£788.46
(exc. VAT)
£946.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | £788.46 |
*price indicative
- RS Stock No.:
- 144-2260
- Mfr. Part No.:
- BSM300D12P2E001
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | C | |
| Series | BSM | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 1.6V | |
| Maximum Power Dissipation | 1875 W | |
| Number of Elements per Chip | 2 | |
| Width | 57.95mm | |
| Length | 152mm | |
| Transistor Material | SiC | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -40 °C | |
| Height | 17mm | |
Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type C | ||
Series BSM | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 1.6V | ||
Maximum Power Dissipation 1875 W | ||
Number of Elements per Chip 2 | ||
Width 57.95mm | ||
Length 152mm | ||
Transistor Material SiC | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -40 °C | ||
Height 17mm | ||
- COO (Country of Origin):
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
MOSFET Transistors, ROHM Semiconductor