Name: ROHM BSM Dual SiC N-Channel SiC Power Module, 80 A, 1200 V, 4-Pin Six Pack BSM080D12P2C008
Brand: ROHM
SKU: 144-2256
Price: 200.89 GBP
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	1200 V
	Package Type	Six Pack
	Series	BSM
	Mounting Type	Surface Mount
	Pin Count	4
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	1.6V
	Maximum Power Dissipation	600 W
	Number of Elements per Chip	2
	Width	45.6mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	SiC
	Length	122mm
	Height	17mm
	Minimum Operating Temperature	-40 °C

	Select all
	Brand ROHM
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 1200 V
	Package Type Six Pack
	Series BSM
	Mounting Type Surface Mount
	Pin Count 4
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 1.6V
	Maximum Power Dissipation 600 W
	Number of Elements per Chip 2
	Width 45.6mm
	Maximum Operating Temperature +150 °C
	Transistor Material SiC
	Length 122mm
	Height 17mm
	Minimum Operating Temperature -40 °C

COO (Country of Origin):: JP

The ROHM BSM080D12P2C008 is a half bridge module consisting of Sic DMOSFET and Sic-SBD this power module offers low surge low switching loss high speed switching possible reduced temperature dependence the Sic half bridge power module is deal for applications such as motor drive inverter converter photovoltaics wind power generation induction heating equipment.

Low surge

Low switching loss

High speed switching possible

Reduced temperature dependence