Vishay TrenchFET P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 SI3493DDV-T1-GE3
- RS Stock No.:
- 134-9713P
- Mfr. Part No.:
- SI3493DDV-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£30.00
(exc. VAT)
£35.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,975 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 250 - 600 | £0.12 |
| 625 - 1225 | £0.108 |
| 1250 - 2475 | £0.101 |
| 2500 + | £0.095 |
*price indicative
- RS Stock No.:
- 134-9713P
- Mfr. Part No.:
- SI3493DDV-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | TSOP-6 | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 51 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 3.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Width | 1.7mm | |
| Length | 3.1mm | |
| Typical Gate Charge @ Vgs | 34.8 nC @ -8 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Height | 1mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type TSOP-6 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 51 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 3.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Width 1.7mm | ||
Length 3.1mm | ||
Typical Gate Charge @ Vgs 34.8 nC @ -8 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Height 1mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
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