N-Channel MOSFET, 8 A, 800 V, 3+Tab-Pin TO-220FP Infineon IPA80R650CEXKSA1
- RS Stock No.:
- 133-9861
- Mfr. Part No.:
- IPA80R650CEXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£7.08
(exc. VAT)
£8.495
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.416 | £7.08 |
| 25 - 120 | £1.212 | £6.06 |
| 125 - 245 | £1.01 | £5.05 |
| 250 + | £0.808 | £4.04 |
*price indicative
- RS Stock No.:
- 133-9861
- Mfr. Part No.:
- IPA80R650CEXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3+Tab | |
| Maximum Drain Source Resistance | 1.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 33 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 10.65mm | |
| Typical Gate Charge @ Vgs | 45 nC @ 10 V | |
| Height | 16.15mm | |
| Minimum Operating Temperature | -40 °C | |
| Forward Diode Voltage | 1V | |
| Series | CoolMOS CE | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3+Tab | ||
Maximum Drain Source Resistance 1.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 33 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 4.9mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 10.65mm | ||
Typical Gate Charge @ Vgs 45 nC @ 10 V | ||
Height 16.15mm | ||
Minimum Operating Temperature -40 °C | ||
Forward Diode Voltage 1V | ||
Series CoolMOS CE | ||
- COO (Country of Origin):
- CN