N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC0901NSATMA1

Unavailable
RS will no longer stock this product.
RS Stock No.:
133-6584
Mfr. Part No.:
BSC0901NSATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

6.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

44 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5.35mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.1mm

Series

OptiMOS

COO (Country of Origin):
MY

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OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

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Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

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