Diodes Inc DMC3016LDV Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 DMC3016LDV-7
- RS Stock No.:
- 133-3340P
- Mfr. Part No.:
- DMC3016LDV-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£39.40
(exc. VAT)
£47.30
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 480 | £0.394 |
| 500 - 980 | £0.383 |
| 1000 - 1980 | £0.373 |
| 2000 + | £0.365 |
*price indicative
- RS Stock No.:
- 133-3340P
- Mfr. Part No.:
- DMC3016LDV-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 15 A, 21 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PDI3333 | |
| Series | DMC3016LDV | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 17 mΩ, 38 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2 V, 2.4V | |
| Minimum Gate Threshold Voltage | 1.2 V, 1.4V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Dual Base | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Length | 3.15mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 19.7 nC @ 15 V, 21 nC @ 15 V | |
| Width | 3.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.8mm | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 15 A, 21 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PDI3333 | ||
Series DMC3016LDV | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 17 mΩ, 38 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2 V, 2.4V | ||
Minimum Gate Threshold Voltage 1.2 V, 1.4V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Dual Base | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Length 3.15mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 19.7 nC @ 15 V, 21 nC @ 15 V | ||
Width 3.15mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.8mm | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.