Dual N-Channel MOSFET, 1.5 A, 20 V, 6-Pin TUMT6 ROHM US6K4TR

Discontinued product

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.5 A
Maximum Drain Source Voltage	20 V
Series	US6K4
Package Type	TUMT6
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	310 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	0.3V
Maximum Power Dissipation	1 W
Transistor Configuration	Dual Base
Maximum Gate Source Voltage	-10 V, +10 V
Typical Gate Charge @ Vgs	1.8 nC @ 4.5 V
Width	1.7mm
Length	2mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Transistor Material	Si
Forward Diode Voltage	1.2V
Height	0.77mm