N-Channel MOSFET, 9.3 A, 650 V, 3-Pin DPAK Toshiba TK9P65W,RQ(S

RS Stock No.:: 133-2805
Mfr. Part No.:: TK9P65W,RQ(S
Brand:: Toshiba

N-Channel MOSFET, 9.3 A, 650 V, 3-Pin DPAK Toshiba TK9P65W,RQ(S

Discontinued product

RS Stock No.:: 133-2805
Mfr. Part No.:: TK9P65W,RQ(S
Brand:: Toshiba

TK9P65W, MOSFET N-Channel 650V
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.3 A
Maximum Drain Source Voltage	650 V
Series	DTMOSIV
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	560 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	80 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Width	6.1mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	20 nC @ 10 V
Transistor Material	Si
Length	6.6mm
Height	2.3mm
Forward Diode Voltage	1.7V

N-Channel MOSFET, 9.3 A, 650 V, 3-Pin DPAK Toshiba TK9P65W,RQ(S

MOSFET N-channel, TK8 & TK9 Series, Toshiba