Dual N-Channel MOSFET, 9.6 A, 20 V, 6-Pin DFN2020 Infineon IRLHS6276TRPBF
- RS Stock No.:
- 130-1019P
- Mfr. Part No.:
- IRLHS6276TRPBF
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 130-1019P
- Mfr. Part No.:
- IRLHS6276TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | DFN2020 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 62 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 6.6 W | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Width | 2.1mm | |
| Typical Gate Charge @ Vgs | 3.1 nC @ 4.5 V | |
| Length | 2.1mm | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.95mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.6 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type DFN2020 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 62 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 6.6 W | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Width 2.1mm | ||
Typical Gate Charge @ Vgs 3.1 nC @ 4.5 V | ||
Length 2.1mm | ||
Series HEXFET | ||
Minimum Operating Temperature -55 °C | ||
Height 0.95mm | ||
Forward Diode Voltage 1.2V | ||
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
