Infineon HEXFET P-Channel MOSFET, 7.2 A, 20 V, 6-Pin DFN2020 IRLHS2242TRPBF
- RS Stock No.:
- 130-1018P
- Mfr. Part No.:
- IRLHS2242TRPBF
- Brand:
- Infineon
Subtotal 25 units (supplied on a continuous strip)*
£5.25
(exc. VAT)
£6.25
(inc. VAT)
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In Stock
- Plus 26,725 unit(s) shipping from 13 October 2025
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Units | Per unit |
|---|---|
| 25 + | £0.21 |
*price indicative
- RS Stock No.:
- 130-1018P
- Mfr. Part No.:
- IRLHS2242TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 7.2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | DFN2020 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 53 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 9.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 2.1mm | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Length | 2.1mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.95mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 7.2 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type DFN2020 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 53 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 9.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Maximum Operating Temperature +150 °C | ||
Width 2.1mm | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Length 2.1mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 0.95mm | ||
Forward Diode Voltage 1.2V | ||
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 7.2A Maximum Continuous Drain Current, 9.6W Maximum Power Dissipation - IRLHS2242TRPBF
This surface mount MOSFET is suitable for applications that demand high-efficiency switching. Its low on-resistance, paired with HEXFET technology, contributes to minimal power loss, making it appropriate for power management tasks within various electronic circuits. With a maximum temperature rating ranging from -55°C to +150°C, it operates effectively in challenging conditions.
Features & Benefits
• Low Rds(on) ensures high efficiency and reduced heat generation
• Capable of handling continuous drain current of 7.2A for robust performance
• Compact 6-pin DFN package facilitates easy integration into limited spaces
• Enhancement mode operation allows for versatile design options
• Provides excellent thermal resistance for improved longevity
• Capable of handling continuous drain current of 7.2A for robust performance
• Compact 6-pin DFN package facilitates easy integration into limited spaces
• Enhancement mode operation allows for versatile design options
• Provides excellent thermal resistance for improved longevity
Applications
• Used for system/load switching in automation systems
• Ideal for charge and discharge switching in battery management
• Suitable for compact electronic devices requiring high efficiency
• Employed in electrical control systems and power management circuits
• Ideal for charge and discharge switching in battery management
• Suitable for compact electronic devices requiring high efficiency
• Employed in electrical control systems and power management circuits
What is the significance of the low Rds(on) feature?
The low Rds(on) feature leads to reduced conduction losses, enhancing overall efficiency and maintaining lower temperatures during operation, which is vital for high power applications.
How does this component manage thermal performance?
It has a maximum temperature rating of +150°C, along with low thermal resistance to improve heat dissipation, ensuring stable operation under high-load conditions.
Can it handle varying operational environments?
Yes, it functions effectively across a temperature range of -55°C to +150°C, making it suitable for rigorous applications in diverse climates.
Is it suitable for high-frequency applications?
The MOSFET's design supports high-speed switching, making it effective for high-frequency applications in contemporary electronics.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
