Infineon HEXFET Dual N-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC IRL6372TRPBF
- RS Stock No.:
- 130-1013P
- Mfr. Part No.:
- IRL6372TRPBF
- Brand:
- Infineon
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Subtotal 125 units (supplied on a continuous strip)*
£30.25
(exc. VAT)
£36.25
(inc. VAT)
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Limited stock
- 15,250 left, ready to ship
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Units | Per unit |
|---|---|
| 125 - 225 | £0.242 |
| 250 - 600 | £0.226 |
| 625 - 1225 | £0.208 |
| 1250 + | £0.203 |
*price indicative
- RS Stock No.:
- 130-1013P
- Mfr. Part No.:
- IRL6372TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.1 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 23 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 2 W | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Width | 4mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 11 nC @ 15 V | |
| Number of Elements per Chip | 2 | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.1 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 2 W | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 11 nC @ 15 V | ||
Number of Elements per Chip 2 | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
N-Channel Power MOSFET 30V, Infineon
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