N-Channel MOSFET, 104 A, 55 V, 3-Pin D2PAK Infineon IRL2505STRLPBF

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Packaging Options:
RS Stock No.:
130-1011P
Mfr. Part No.:
IRL2505STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

104 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 W

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Width

4.83mm

Typical Gate Charge @ Vgs

130 nC @ 5 V

Length

10.67mm

Maximum Operating Temperature

+175 °C

Series

HEXFET

Height

9.65mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.