Infineon HEXFET N-Channel MOSFET, 246 A, 75 V, 3-Pin D2PAK IRFS7730TRLPBF
- RS Stock No.:
- 130-1007P
- Mfr. Part No.:
- IRFS7730TRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£24.05
(exc. VAT)
£28.86
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 54 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 18 | £2.405 |
| 20 - 48 | £2.165 |
| 50 - 98 | £1.95 |
| 100 + | £1.85 |
*price indicative
- RS Stock No.:
- 130-1007P
- Mfr. Part No.:
- IRFS7730TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 246 A | |
| Maximum Drain Source Voltage | 75 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 375 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 271 nC @ 10 V | |
| Width | 9.65mm | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 246 A | ||
Maximum Drain Source Voltage 75 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 375 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 271 nC @ 10 V | ||
Width 9.65mm | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
