N-Channel MOSFET, 62 A, 200 V, 3-Pin D2PAK Infineon IRFS4227TRLPBF
- RS Stock No.:
- 130-1003
- Mfr. Part No.:
- IRFS4227TRLPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 130-1003
- Mfr. Part No.:
- IRFS4227TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 62 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 26 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 330 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V | |
| Height | 9.65mm | |
| Minimum Operating Temperature | -40 °C | |
| Forward Diode Voltage | 1.3V | |
| Series | HEXFET | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 62 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 26 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 330 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 70 nC @ 10 V | ||
Height 9.65mm | ||
Minimum Operating Temperature -40 °C | ||
Forward Diode Voltage 1.3V | ||
Series HEXFET | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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