Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRFS4020TRLPBF
- RS Stock No.:
- 130-1000P
- Mfr. Part No.:
- IRFS4020TRLPBF
- Brand:
- Infineon
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Subtotal 50 units (supplied on a continuous strip)*
£70.70
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£84.85
(inc. VAT)
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In Stock
- Plus 80 unit(s) shipping from 06 October 2025
- Plus 999,999,915 unit(s) shipping from 05 January 2026
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Units | Per unit |
|---|---|
| 50 - 120 | £1.414 |
| 125 - 245 | £1.38 |
| 250 - 495 | £1.344 |
| 500 + | £1.308 |
*price indicative
- RS Stock No.:
- 130-1000P
- Mfr. Part No.:
- IRFS4020TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 105 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.9V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Height | 9.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 105 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Digital Audio MOSFET, Infineon
Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - IRFS4020TRLPBF
This MOSFET is designed for optimised performance in Class-D audio amplifier applications. Advanced processing techniques yield low on-resistance while enhancing efficiency, total harmonic distortion (THD), and electromagnetic interference (EMI). It can function effectively at elevated temperatures, making it suitable for various environments.
Features & Benefits
• Designed for high-efficiency Class-D audio amplification
• Low Rds(on) improves overall efficiency
• Operating junction temperature up to 175°C ensures robustness
• Repetitive avalanche capability safeguards against voltage spikes
• Low Rds(on) improves overall efficiency
• Operating junction temperature up to 175°C ensures robustness
• Repetitive avalanche capability safeguards against voltage spikes
Applications
• Utilised in Class-D audio amplifiers for improved sound quality
• Ideal for high current power supply
• Suitable for consumer and professional audio equipment
• Employed in high-performance automotive audio systems
• Ideal for high current power supply
• Suitable for consumer and professional audio equipment
• Employed in high-performance automotive audio systems
What is the maximum continuous drain current?
The device can handle a maximum continuous drain current of 18A at 25°C.
Can this device operate at high temperatures?
Yes, it is designed to function effectively at temperatures as high as 175°C.
What configurations can it be used in?
It is suitable for half-bridge configurations in audio amplifiers, delivering significant power outputs.
How does low gate charge impact performance?
The low gate charge enhances efficiency and reduces the turn-on time, thus improving overall amplifier performance.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
