Infineon HEXFET N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRLPBF

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Subtotal 25 units (supplied on a continuous strip)*

£42.55

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£51.05

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Packaging Options:
RS Stock No.:
130-0997P
Mfr. Part No.:
IRFS3307ZTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

128 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.65mm

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

79 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

4.83mm

Forward Diode Voltage

1.3V

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.