Infineon HEXFET N-Channel MOSFET, 71 A, 60 V, 3-Pin DPAK IRFR7546TRPBF
- RS Stock No.:
- 130-0990P
- Mfr. Part No.:
- IRFR7546TRPBF
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£5.53
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£6.64
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Units | Per unit |
|---|---|
| 10 + | £0.553 |
*price indicative
- RS Stock No.:
- 130-0990P
- Mfr. Part No.:
- IRFR7546TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 71 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 99 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 2.39mm | |
| Typical Gate Charge @ Vgs | 58 nC @ 20 V | |
| Length | 6.73mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 6.22mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 71 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 99 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 2.39mm | ||
Typical Gate Charge @ Vgs 58 nC @ 20 V | ||
Length 6.73mm | ||
Minimum Operating Temperature -55 °C | ||
Height 6.22mm | ||
Forward Diode Voltage 1.2V | ||
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
Infineon HEXFET Series MOSFET, 71A Maximum Continuous Drain Current, 99W Maximum Power Dissipation - IRFR7546TRPBF
This high-performance MOSFET is engineered for various applications that require efficient power management. With robust specifications, it is well-suited for scenarios demanding durability and highcurrent capabilities. It is commonly used in automation and electrical applications, showcasing exceptional performance characteristics across different environments.
Features & Benefits
• Maximum continuous drain current of 71A
• Rated for a maximum drain-source voltage of 60V
• Low on-resistance enhances efficiency in power delivery
• DPAK package designed for ease of surface mounting
• High power dissipation capability improves thermal management
• Enhancement mode operation optimises switching performance
• Rated for a maximum drain-source voltage of 60V
• Low on-resistance enhances efficiency in power delivery
• DPAK package designed for ease of surface mounting
• High power dissipation capability improves thermal management
• Enhancement mode operation optimises switching performance
Applications
• Suitable for brushed motor drive
• Useful in battery-powered circuit designs
• Employed in half-bridge and full-bridge topologies
• Effective in synchronous rectifier
• Applied in DC/DC and AC/DC power conversion systems
• Useful in battery-powered circuit designs
• Employed in half-bridge and full-bridge topologies
• Effective in synchronous rectifier
• Applied in DC/DC and AC/DC power conversion systems
What is the thermal specification for continuous operation?
It supports a maximum power dissipation of 99W, ensuring efficient operation without overheating under suitable conditions.
How does it perform in high-temperature environments?
The device operates efficiently up to a maximum junction temperature of +175°C, making it applicable in challenging situations.
What mounting options are available for installation?
It features a surface mount design in a DPAK package, allowing for straightforward integration onto PCBs while saving space.
Is there a limitation on the gate voltage?
Yes, the gate-to-source voltage must not exceed ±20V to ensure safe operating conditions.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
