N-Channel MOSFET, 100 A, 75 V, 8-Pin PQFN Infineon IRFH5007TRPBF

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Packaging Options:
RS Stock No.:
130-0974P
Mfr. Part No.:
IRFH5007TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

75 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

156 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

6mm

Length

5mm

Height

0.9mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.