Infineon HEXFET N-Channel MOSFET, 100 A, 60 V, 8-Pin PQFN 5 x 6 IRFH5006TRPBF
- RS Stock No.:
- 130-0973P
- Mfr. Part No.:
- IRFH5006TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
£41.85
(exc. VAT)
£50.225
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 35 unit(s), ready to ship
Units | Per unit |
|---|---|
| 25 - 45 | £1.674 |
| 50 - 120 | £1.556 |
| 125 - 245 | £1.456 |
| 250 + | £1.356 |
*price indicative
- RS Stock No.:
- 130-0973P
- Mfr. Part No.:
- IRFH5006TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | HEXFET | |
| Package Type | PQFN 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 4.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 156 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5mm | |
| Typical Gate Charge @ Vgs | 69 nC @ 20 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
| Height | 0.85mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 60 V | ||
Series HEXFET | ||
Package Type PQFN 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 156 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6mm | ||
Maximum Operating Temperature +150 °C | ||
Width 5mm | ||
Typical Gate Charge @ Vgs 69 nC @ 20 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Height 0.85mm | ||
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