Infineon HEXFET N-Channel MOSFET, 24 A, 30 V, 8-Pin SOIC IRF8788TRPBF
- RS Stock No.:
 - 130-0967P
 - Mfr. Part No.:
 - IRF8788TRPBF
 - Brand:
 - Infineon
 
Subtotal 10 units (supplied on a continuous strip)*
£6.32
(exc. VAT)
£7.58
(inc. VAT)
FREE delivery for orders over £50.00
- 6,340 unit(s) ready to ship
 
Units  | Per unit  | 
|---|---|
| 10 + | £0.632 | 
*price indicative
- RS Stock No.:
 - 130-0967P
 - Mfr. Part No.:
 - IRF8788TRPBF
 - Brand:
 - Infineon
 
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 24 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 2.5 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 44 nC @ 4.5 V | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Width | 4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
| Forward Diode Voltage | 1V | |
| Select all | ||
|---|---|---|
Brand Infineon  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 24 A  | ||
Maximum Drain Source Voltage 30 V  | ||
Series HEXFET  | ||
Package Type SOIC  | ||
Mounting Type Surface Mount  | ||
Pin Count 8  | ||
Maximum Drain Source Resistance 3.8 mΩ  | ||
Channel Mode Enhancement  | ||
Maximum Gate Threshold Voltage 2.35V  | ||
Minimum Gate Threshold Voltage 1.35V  | ||
Maximum Power Dissipation 2.5 W  | ||
Maximum Gate Source Voltage -20 V, +20 V  | ||
Maximum Operating Temperature +150 °C  | ||
Typical Gate Charge @ Vgs 44 nC @ 4.5 V  | ||
Length 5mm  | ||
Number of Elements per Chip 1  | ||
Width 4mm  | ||
Minimum Operating Temperature -55 °C  | ||
Height 1.5mm  | ||
Forward Diode Voltage 1V  | ||


