Infineon DirectFET N-Channel MOSFET, 198 A, 40 V DirectFET ISOMETRIC IRF7946TRPBF
- RS Stock No.:
- 130-0965P
- Mfr. Part No.:
- IRF7946TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£32.60
(exc. VAT)
£39.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 54 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 48 | £1.63 |
| 50 - 98 | £1.52 |
| 100 - 198 | £1.41 |
| 200 + | £1.32 |
*price indicative
- RS Stock No.:
- 130-0965P
- Mfr. Part No.:
- IRF7946TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 198 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | DirectFET | |
| Package Type | DirectFET ISOMETRIC | |
| Mounting Type | Surface Mount | |
| Maximum Drain Source Resistance | 1.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 96 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5.05mm | |
| Typical Gate Charge @ Vgs | 141 nC @ 20 V | |
| Length | 6.35mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.53mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 198 A | ||
Maximum Drain Source Voltage 40 V | ||
Series DirectFET | ||
Package Type DirectFET ISOMETRIC | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 1.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 96 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Width 5.05mm | ||
Typical Gate Charge @ Vgs 141 nC @ 20 V | ||
Length 6.35mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 0.53mm | ||
Forward Diode Voltage 1.2V | ||
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
