Infineon CoolMOS™ CE N-Channel MOSFET, 9 A, 550 V, 3-Pin SOT-223 IPN50R650CEATMA1
- RS Stock No.:
- 130-0914P
- Mfr. Part No.:
- IPN50R650CEATMA1
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 130-0914P
- Mfr. Part No.:
- IPN50R650CEATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 9 A | |
Maximum Drain Source Voltage | 550 V | |
Package Type | SOT-223 | |
Series | CoolMOS™ CE | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 650 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 5 W | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Width | 3.7mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Length | 6.7mm | |
Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
Height | 1.7mm | |
Minimum Operating Temperature | -40 °C | |
Forward Diode Voltage | 0.84V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 550 V | ||
Package Type SOT-223 | ||
Series CoolMOS™ CE | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 650 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 5 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 3.7mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 6.7mm | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Height 1.7mm | ||
Minimum Operating Temperature -40 °C | ||
Forward Diode Voltage 0.84V | ||