Infineon CoolMOS™ P7 N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1

Subtotal 5 units (supplied on a continuous strip)*

£1.83

(exc. VAT)

£2.195

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,425 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
5 +£0.366

*price indicative

Packaging Options:
RS Stock No.:
130-0906P
Mfr. Part No.:
IPD80R1K4P7ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ P7

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

32 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.22mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Length

6.73mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Infineon CoolMOS™P7 Power MOSFET


The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.