Infineon CoolMOS™ CE N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK IPD60R1K0CEAUMA1
- RS Stock No.:
- 130-0898P
- Mfr. Part No.:
- IPD60R1K0CEAUMA1
- Brand:
- Infineon
Subtotal 25 units (supplied on a continuous strip)*
£9.625
(exc. VAT)
£11.55
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,100 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 + | £0.385 |
*price indicative
- RS Stock No.:
- 130-0898P
- Mfr. Part No.:
- IPD60R1K0CEAUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.8 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | DPAK (TO-252) | |
| Series | CoolMOS™ CE | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 61 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Minimum Operating Temperature | -40 °C | |
| Forward Diode Voltage | 0.9V | |
| Height | 2.41mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.8 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type DPAK (TO-252) | ||
Series CoolMOS™ CE | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 61 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 13 nC @ 10 V | ||
Length 6.73mm | ||
Width 6.22mm | ||
Minimum Operating Temperature -40 °C | ||
Forward Diode Voltage 0.9V | ||
Height 2.41mm | ||
Infineon CoolMOS™ CE Power MOSFET
Infineon CoolMOS™ CE Series MOSFET, 6.8A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IPD60R1K0CEAUMA1
This high-voltage MOSFET is designed to improve performance in various power applications. It is suitable for systems requiring robust switching capabilities and serves sectors such as automation and electronics. The CoolMOS technology employs superjunction principles, ensuring efficiency and reliability under diverse operating conditions.
Features & Benefits
• Reduction in switching and conduction losses enhances efficiency
• Robust body diode withstands hard commutation for increased reliability
• Low gate charge characteristics simplify driver requirements during operation
• Enhanced ESD robustness promotes durability in challenging environments
• Suitable for both hard and soft switching applications optimises performance
• Robust body diode withstands hard commutation for increased reliability
• Low gate charge characteristics simplify driver requirements during operation
• Enhanced ESD robustness promotes durability in challenging environments
• Suitable for both hard and soft switching applications optimises performance
Applications
• Utilised in power factor correction stages for effective energy management
• Employed in hard switching PWM stages for efficient power conversion and control
• Integrates seamlessly within resonant switching stages across various device
• Suitable for multiple sectors including lighting, servers, and telecom equipment
• Employed in hard switching PWM stages for efficient power conversion and control
• Integrates seamlessly within resonant switching stages across various device
• Suitable for multiple sectors including lighting, servers, and telecom equipment
How does the switching behaviour impact energy efficiency during operation?
Switching behaviour is important as lower switching losses contribute to higher overall efficiency, leading to cooler operation and reduced heat generation, which supports system longevity.
What protective measures are recommended during installation?
Using ferrite beads on gates or separate totem poles is advisable to reduce ringing and ensure stable operation during switching.
Can it operate effectively under extreme temperature conditions?
The MOSFET is rated for operation between -40°C and +150°C, enabling reliable functionality in various environmental conditions.
What considerations should be taken when paralleling multiple devices?
For effective paralleling, proper gate drive techniques should be employed to achieve balanced current distribution among the devices and optimise performance.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
