IXYS Polar HiPerFET N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P
- RS Stock No.:
- 125-8040
- Mfr. Part No.:
- IXFN200N10P
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
£24.05
(exc. VAT)
£28.86
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 28 unit(s) ready to ship
- Plus 2 unit(s) ready to ship from another location
- Plus 806 unit(s) shipping from 21 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | £24.05 |
| 2 - 4 | £21.62 |
| 5 - 9 | £20.51 |
| 10 - 19 | £18.40 |
| 20 + | £17.94 |
*price indicative
- RS Stock No.:
- 125-8040
- Mfr. Part No.:
- IXFN200N10P
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-227 | |
| Series | Polar HiPerFET | |
| Mounting Type | Screw Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 7.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 680 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 38.23mm | |
| Number of Elements per Chip | 1 | |
| Width | 25.07mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 235 nC @ 10 V | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.6mm | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-227 | ||
Series Polar HiPerFET | ||
Mounting Type Screw Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 7.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 680 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 38.23mm | ||
Number of Elements per Chip 1 | ||
Width 25.07mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 235 nC @ 10 V | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
Height 9.6mm | ||
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