Infineon HEXFET N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF
- RS Stock No.:
- 124-9022
- Mfr. Part No.:
- IRFP4668PBF
- Brand:
- Infineon
Subtotal (1 tube of 25 units)*
£101.15
(exc. VAT)
£121.375
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,600 unit(s) shipping from 20 October 2025
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Units | Per unit | Per Tube* |
|---|---|---|
| 25 + | £4.046 | £101.15 |
*price indicative
- RS Stock No.:
- 124-9022
- Mfr. Part No.:
- IRFP4668PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 130 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-247AC | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 520 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 5.31mm | |
| Length | 15.87mm | |
| Typical Gate Charge @ Vgs | 161 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
| Height | 20.7mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 130 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 520 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5.31mm | ||
Length 15.87mm | ||
Typical Gate Charge @ Vgs 161 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Height 20.7mm | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 130A Maximum Continuous Drain Current, 200V Maximum Drain Source Voltage - IRFP4668PBF
This MOSFET is a high-performance N-channel device designed for efficient power management in various applications. Its dimensions are 15.87mm in length, 5.31mm in width, and 20.7mm in height, housed in a TO-247AC package. With robust specifications including a maximum continuous drain current of 130A and a maximum drain-source voltage of 200V, it is ideal for demanding electrical applications.
Features & Benefits
• Enhanced body diode for improved switching performance
• Low Rds(on) of 10mΩ minimises power loss
• High efficiency in synchronous rectification circuits
• Increased ruggedness under dynamic dV/dt conditions
• Fully characterised avalanche and thermal performance for reliability
• Low Rds(on) of 10mΩ minimises power loss
• High efficiency in synchronous rectification circuits
• Increased ruggedness under dynamic dV/dt conditions
• Fully characterised avalanche and thermal performance for reliability
Applications
• Used in high-speed power switching
• Suitable for uninterruptible power supply systems
• Ideal for hard-switched and high-frequency circuits
• Applicable in various automation and industrial power systems
• Suitable for uninterruptible power supply systems
• Ideal for hard-switched and high-frequency circuits
• Applicable in various automation and industrial power systems
What are the thermal ratings for safe operation?
The maximum power dissipation is rated at 520W at 25°C, and the junction temperature should not exceed 175°C to ensure safe operation.
How does the gate threshold voltage impact functionality?
The gate threshold voltage ranges from 3V to 5V, facilitating efficient control during switching operations, which is crucial for reliable performance in power applications.
Can this MOSFET handle high pulsed current loads?
Yes, it is rated for a pulsed drain current of up to 520A, making it suitable for heavy-duty applications requiring high current handling capabilities.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
