N-Channel MOSFET, 76 A, 200 V, 3-Pin TO-220AB Infineon IRFB4127PBF
- RS Stock No.:
- 124-9006
- Mfr. Part No.:
- IRFB4127PBF
- Brand:
- Infineon
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RS will no longer stock this product.
- RS Stock No.:
- 124-9006
- Mfr. Part No.:
- IRFB4127PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 76 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 375 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 100 nC @ 10 V | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Width | 4.83mm | |
| Number of Elements per Chip | 1 | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.02mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 76 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 100 nC @ 10 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Series HEXFET | ||
Minimum Operating Temperature -55 °C | ||
Height 9.02mm | ||
- COO (Country of Origin):
- MX
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard through-hole power package
High-current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available