Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRFB4110PBF
- RS Stock No.:
- 124-8963
- Mfr. Part No.:
- IRFB4110PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£113.10
(exc. VAT)
£135.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,900 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £2.262 | £113.10 |
| 100 - 200 | £2.081 | £104.05 |
| 250 + | £1.968 | £98.40 |
*price indicative
- RS Stock No.:
- 124-8963
- Mfr. Part No.:
- IRFB4110PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 370 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
| Length | 10.66mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.82mm | |
| Transistor Material | Si | |
| Height | 9.02mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 370 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Length 10.66mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 4.82mm | ||
Transistor Material Si | ||
Height 9.02mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
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Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 370W Maximum Power Dissipation - IRFB4110PBF
This MOSFET serves as an efficient power transistor tailored for applications in automation, electronics, and electrical industries. Its robust construction and precise specifications provide a versatile solution for applications where efficiency and reliability are essential. With an enhancement mode design and an N-channel configuration, it is suitable for high-speed switching operations.
Features & Benefits
• Maximum continuous drain current of 180A supports high performance
• Drain-to-source voltage range of 100V allows for a variety of applications
• Low RDS(on) of 4.5mΩ reduces power loss and enhances efficiency
• Power dissipation capability of up to 370W ensures stability
• Improved thermal characteristics foster reliability in extreme conditions
• Full characterisation on avalanche and dynamic dv/dt ruggedness promotes durability
• Drain-to-source voltage range of 100V allows for a variety of applications
• Low RDS(on) of 4.5mΩ reduces power loss and enhances efficiency
• Power dissipation capability of up to 370W ensures stability
• Improved thermal characteristics foster reliability in extreme conditions
• Full characterisation on avalanche and dynamic dv/dt ruggedness promotes durability
Applications
• Employed in high-efficiency synchronous rectification for power supplies
• Suitable for uninterruptible power supply systems
• Ideal for high-speed power switching circuits
• Applicable in hard switched and high frequency circuits
• Suitable for uninterruptible power supply systems
• Ideal for high-speed power switching circuits
• Applicable in hard switched and high frequency circuits
What is the suitable operating temperature range for optimal performance?
It operates effectively within -55°C to +175°C, ensuring functionality across various environments.
How does the MOSFET minimise energy loss in circuits?
The low RDS(on) of 4.5mΩ significantly cuts conduction losses, allowing for efficient operation in power electronics.
Can it be used in high-frequency applications?
Yes, its design facilitates high-speed switching, making it appropriate for applications requiring rapid on-off transitions.
What are the thermal resistance values for proper mounting?
The junction-to-case thermal resistance is 0.402°C/W, while the case-to-sink resistance is 0.50°C/W, enabling effective heat dissipation.
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