Infineon HEXFET N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250MPBF
- RS Stock No.:
- 124-8762
- Mfr. Part No.:
- IRFP250MPBF
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 124-8762
- Mfr. Part No.:
- IRFP250MPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-247AC | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 75 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 214 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 123 nC @ 10 V | |
| Length | 16.13mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 5.2mm | |
| Transistor Material | Si | |
| Height | 21.1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 75 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 214 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 123 nC @ 10 V | ||
Length 16.13mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 5.2mm | ||
Transistor Material Si | ||
Height 21.1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250MPBF
This N-channel MOSFET is designed for high performance and efficiency across a variety of applications. It offers a maximum continuous drain current of 30A and a drain-source voltage rating of 200V, making it suitable for tasks in the automation and electronics sectors. Its design ensures effective thermal performance, which enhances its use in electrical and mechanical industries.
Features & Benefits
• Dynamic dv/dt rating ensures stability during operation
• Enhanced thermal capabilities, with an operating temperature of up to 175°C
• Low on-resistance reduces power losses
• Fully avalanche-rated, providing over-voltage protection
• Simple drive requirements for easier integration into designs
• Enhanced thermal capabilities, with an operating temperature of up to 175°C
• Low on-resistance reduces power losses
• Fully avalanche-rated, providing over-voltage protection
• Simple drive requirements for easier integration into designs
Applications
• Suitable for high-frequency switching
• Ideal for power supplies and converters
• Applicable in motor control systems and industrial drives
• Utilised in renewable energy systems, such as solar inverters
• Ideal for power supplies and converters
• Applicable in motor control systems and industrial drives
• Utilised in renewable energy systems, such as solar inverters
How is thermal performance managed in demanding environments?
The thermal resistance characteristics are designed for efficient heat dissipation, allowing operation from -55°C to +175°C.
What are the implications of the low Rds(on)?
The low on-resistance results in lower power dissipation during conduction, enhancing overall system efficiency and reducing thermal stress on components.
Can this device be used for parallel configurations?
Yes, the design facilitates paralleling, increasing current capacity and improving thermal performance in high-power applications.
What should be considered when selecting the gate drive voltage?
A gate drive voltage between 2V and 4V is optimal for ensuring sufficient switching performance and preventing undesired operation.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
