P-Channel MOSFET, 7.3 A, 200 V, 3-Pin D2PAK onsemi FQB7P20TM
- RS Stock No.:
- 124-1717
- Mfr. Part No.:
- FQB7P20TM
- Brand:
- onsemi
Discontinued product
- RS Stock No.:
- 124-1717
- Mfr. Part No.:
- FQB7P20TM
- Brand:
- onsemi
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
Voltage controlled P-Channel small signal switch
High-Density cell design
High saturation current
Superior switching
Great rugged and reliable performance
DMOS technology
High-Density cell design
High saturation current
Superior switching
Great rugged and reliable performance
DMOS technology
Applications:
Load Switching
DC/DC converter
Battery protection
Power management control
DC motor control
DC/DC converter
Battery protection
Power management control
DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 7.3 A |
Maximum Drain Source Voltage | 200 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 690 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 3.13 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Width | 9.65mm |
Transistor Material | Si |
Length | 10.67mm |
Typical Gate Charge @ Vgs | 19 nC @ 10 V |
Minimum Operating Temperature | -55 °C |
Height | 4.83mm |