onsemi MegaFET N-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220AB RFP50N06
- RS Stock No.:
- 124-1672
- Mfr. Part No.:
- RFP50N06
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 50 units)*
£42.20
(exc. VAT)
£50.65
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 24 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.844 | £42.20 |
| 100 - 450 | £0.714 | £35.70 |
| 500 - 950 | £0.622 | £31.10 |
| 1000 + | £0.603 | £30.15 |
*price indicative
- RS Stock No.:
- 124-1672
- Mfr. Part No.:
- RFP50N06
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | MegaFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 22 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 131 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 125 nC @ 20 V | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 9.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 60 V | ||
Series MegaFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 22 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 131 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 125 nC @ 20 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.