onsemi PowerTrench Dual N/P-Channel MOSFET, 2 A, 2.5 A, 30 V, 6-Pin SOT-23 FDC6333C
- RS Stock No.:
- 124-1309
- Mfr. Part No.:
- FDC6333C
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£447.00
(exc. VAT)
£537.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,000 unit(s) shipping from 28 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.149 | £447.00 |
*price indicative
- RS Stock No.:
- 124-1309
- Mfr. Part No.:
- FDC6333C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 2 A, 2.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 150 mΩ, 220 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 960 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -25 V, -16 V, +16 V, +25 V | |
| Length | 3mm | |
| Typical Gate Charge @ Vgs | 4.1 nC @ 10 V, 4.7 nC @ 10 V | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 1.7mm | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 2 A, 2.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 150 mΩ, 220 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 960 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -25 V, -16 V, +16 V, +25 V | ||
Length 3mm | ||
Typical Gate Charge @ Vgs 4.1 nC @ 10 V, 4.7 nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 1.7mm | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.