Infineon CoolMOS™ P6 N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 IPW60R190P6FKSA1
- RS Stock No.:
- 110-9099P
- Mfr. Part No.:
- IPW60R190P6FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied in a tube)*
£54.60
(exc. VAT)
£65.525
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 25 - 45 | £2.184 |
| 50 - 120 | £2.02 |
| 125 - 245 | £1.884 |
| 250 + | £1.748 |
*price indicative
- RS Stock No.:
- 110-9099P
- Mfr. Part No.:
- IPW60R190P6FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS™ P6 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 151 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 5.21mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Length | 16.13mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 0.9V | |
| Height | 21.1mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ P6 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 151 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5.21mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Length 16.13mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 0.9V | ||
Height 21.1mm | ||
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