Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON Infineon IPG20N06S4L26ATMA1
- RS Stock No.:
- 110-9095
- Mfr. Part No.:
- IPG20N06S4L26ATMA1
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 110-9095
- Mfr. Part No.:
- IPG20N06S4L26ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 46 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 33 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
| Width | 5.9mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
| Length | 5.15mm | |
| Forward Diode Voltage | 1.3V | |
| Series | OptiMOS | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 46 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 33 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Width 5.9mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Length 5.15mm | ||
Forward Diode Voltage 1.3V | ||
Series OptiMOS | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
RoHS Status: Exempt
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
