N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK Infineon IPD90N03S4L03ATMA1
- RS Stock No.:
- 110-7479P
- Mfr. Part No.:
- IPD90N03S4L03ATMA1
- Brand:
- Infineon
Subtotal 25 units (supplied on a continuous strip)*
£25.70
(exc. VAT)
£30.85
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 25 + | £1.028 |
*price indicative
- RS Stock No.:
- 110-7479P
- Mfr. Part No.:
- IPD90N03S4L03ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 90 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 94 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.5mm | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Series | OptiMOS T2 | |
| Height | 2.3mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 94 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 6.5mm | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Series OptiMOS T2 | ||
Height 2.3mm | ||
RoHS Status: Exempt
Infineon OptiMOS™ T2 Power MOSFETs
Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
