N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 Infineon IPW60R190E6FKSA1

RS Stock No.:: 110-7443P
Mfr. Part No.:: IPW60R190E6FKSA1
Brand:: Infineon

N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 Infineon IPW60R190E6FKSA1

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Subtotal 20 units (supplied in a tube)*

£79.10

(exc. VAT)

£94.92

(inc. VAT)

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Units	Per unit
20 - 36	£3.955
40 - 96	£3.56
100 - 196	£3.205
200 +	£3.045

*price indicative

RS Stock No.:: 110-7443P
Mfr. Part No.:: IPW60R190E6FKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	20 A
	Maximum Drain Source Voltage	650 V
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	440 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	151 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	5.21mm
	Length	16.13mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	63 nC @ 10 V
	Series	CoolMOS E6
	Height	21.1mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	0.9V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 20 A
	Maximum Drain Source Voltage 650 V
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 440 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 151 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 5.21mm
	Length 16.13mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 63 nC @ 10 V
	Series CoolMOS E6
	Height 21.1mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 0.9V

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