N-Channel MOSFET, 16 A, 700 V, 3-Pin DPAK Infineon IPD65R250C6XTMA1
- RS Stock No.:
- 110-7125
- Mfr. Part No.:
- IPD65R250C6XTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£8.98
(exc. VAT)
£10.775
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.796 | £8.98 |
| 50 - 95 | £1.474 | £7.37 |
| 100 - 245 | £1.348 | £6.74 |
| 250 - 495 | £1.268 | £6.34 |
| 500 + | £1.228 | £6.14 |
*price indicative
- RS Stock No.:
- 110-7125
- Mfr. Part No.:
- IPD65R250C6XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 590 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 208.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.41mm | |
| Series | CoolMOS C6 | |
| Forward Diode Voltage | 0.9V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 590 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 208.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 44 nC @ 10 V | ||
Length 6.73mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 2.41mm | ||
Series CoolMOS C6 | ||
Forward Diode Voltage 0.9V | ||
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.