Vishay EF Series N-Channel MOSFET, 21 A, 600 V, 3-Pin D2PAK SIHB155N60EF-GE3
- RS Stock No.:
- 653-175
- Mfr. Part No.:
- SIHB155N60EF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
£104.65
(exc. VAT)
£125.60
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 04 March 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | £2.093 | £104.65 |
| 250 + | £2.051 | £102.55 |
*price indicative
- RS Stock No.:
- 653-175
- Mfr. Part No.:
- SIHB155N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | EF Series | |
| Package Type | TO-263 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 600 V | ||
Series EF Series | ||
Package Type TO-263 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for enhanced switching performance. It offers a low figure of merit (FOM), reduced effective capacitance, and optimized thermal behaviour. Designed for server, telecom, SMPS, and power factor correction supplies, it delivers reliable efficiency in demanding power applications.
Pb Free
Halogen free
RoHS compliant
Halogen free
RoHS compliant