Vishay SISS5812DN N-Channel MOSFET, 42.8 A, 80 V, 8-Pin PowerPAK SISS5812DN-T1-GE3
- RS Stock No.:
- 653-132
- Mfr. Part No.:
- SISS5812DN-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£1,092.00
(exc. VAT)
£1,311.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.364 | £1,092.00 |
*price indicative
- RS Stock No.:
- 653-132
- Mfr. Part No.:
- SISS5812DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 42.8 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PowerPAK | |
| Series | SISS5812DN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 42.8 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PowerPAK | ||
Series SISS5812DN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The Vishay TrenchFET Gen V N-Channel Power MOSFET rated for 80 V drain-source voltage. Packaged in a compact PowerPAK 1212-8S, it's ideal for AI server power solutions, DC/DC converters, and load switching.
Pb Free
Halogen free
RoHS compliant
Halogen free
RoHS compliant