Microchip DN3135 N-Channel MOSFET, 730 mA, 350 V Depletion, 3-Pin SOT-89 DN3135N8-G
- RS Stock No.:
- 649-459P
- Mfr. Part No.:
- DN3135N8-G
- Brand:
- Microchip
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Subtotal 50 units (supplied on a continuous strip)*
£28.90
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£34.70
(inc. VAT)
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In Stock
- 1,985 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 50 - 245 | £0.578 |
| 250 - 495 | £0.518 |
| 500 + | £0.41 |
*price indicative
- RS Stock No.:
- 649-459P
- Mfr. Part No.:
- DN3135N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 730 mA | |
| Maximum Drain Source Voltage | 350 V | |
| Package Type | SOT-89 | |
| Series | DN3135 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Depletion | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 730 mA | ||
Maximum Drain Source Voltage 350 V | ||
Package Type SOT-89 | ||
Series DN3135 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Microchip Low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage