STMicroelectronics ST8L60 Silicon N-Channel MOSFET, 39 A, 600 V, 5-Pin PowerFLAT ST8L60N065DM9

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RS Stock No.:
648-108
Mfr. Part No.:
ST8L60N065DM9
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT

Series

ST8L60

Mounting Type

Surface

Pin Count

5

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

COO (Country of Origin):
CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Low gate charge
Low input capacitance and resistance
100 percent avalanche tested
Excellent switching performance
PowerFLAT 8x8 HV package
RoHS compliant