Microchip DN2625 Silicon N-Channel MOSFET, 1.1 A, 250 V Depletion, 3-Pin DPAK DN2625K4-G
- RS Stock No.:
- 598-727
- Mfr. Part No.:
- DN2625K4-G
- Brand:
- Microchip
Subtotal (1 reel of 2000 units)*
£2,568.00
(exc. VAT)
£3,082.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 22 January 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £1.284 | £2,568.00 |
*price indicative
- RS Stock No.:
- 598-727
- Mfr. Part No.:
- DN2625K4-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.1 A | |
| Maximum Drain Source Voltage | 250 V | |
| Series | DN2625 | |
| Package Type | TO-252 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Depletion | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.1 A | ||
Maximum Drain Source Voltage 250 V | ||
Series DN2625 | ||
Package Type TO-252 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- CN
The Microchip Low threshold depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Very low gate threshold voltage
Designed to be source driven
Low switching losses
Low effective output capacitance
Designed for inductive loads
Designed to be source driven
Low switching losses
Low effective output capacitance
Designed for inductive loads