Microchip VP0550 Silicon P-Channel MOSFET, 240 mA, 500 V, 3-Pin TO-92 VP0550N3-G
- RS Stock No.:
- 598-726
- Mfr. Part No.:
- VP0550N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
£1,198.00
(exc. VAT)
£1,438.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 12 December 2025
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Units | Per unit | Per Bag* |
|---|---|---|
| 1000 + | £1.198 | £1,198.00 |
*price indicative
- RS Stock No.:
- 598-726
- Mfr. Part No.:
- VP0550N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 240 mA | |
| Maximum Drain Source Voltage | 500 V | |
| Series | VP0550 | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type P | ||
Maximum Continuous Drain Current 240 mA | ||
Maximum Drain Source Voltage 500 V | ||
Series VP0550 | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Microchip P Channel enhancement-mode vertical MOSFET is a low-threshold, normally-off transistor that utilizes a vertical DMOS structure and Supertex’s proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient inherent in MOS devices. As with all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown, ensuring robust and reliable performance.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
High input impedance and high gain
Excellent thermal stability
Low power drive requirement
Ease of paralleling
High input impedance and high gain
Excellent thermal stability