N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC Infineon IRF8707PBF
- RS Stock No.:
- 495-871
- Mfr. Part No.:
- IRF8707PBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 495-871
- Mfr. Part No.:
- IRF8707PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 6.2 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Series | HEXFET | |
| Height | 1.5mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 6.2 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Series HEXFET | ||
Height 1.5mm | ||
Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF8707TRPBF
This MOSFET is tailored for power applications, enhancing efficiency and thermal performance. Its low on-resistance and minimal gate charge significantly reduce both conduction and switching losses, making it well-suited for high-efficiency DC-DC converters across various applications. The Compact SOIC package increases versatility and integrates easily into confined spaces.
Features & Benefits
• Low gate charge diminishes switching losses in applications
• Maximum continuous drain current of 11A boosts performance
• High temperature tolerance up to +150°C ensures reliability
• Low Rds(on) enhances overall power efficiency
• N-channel configuration allows flexible designs
• Fully characterised for avalanche voltage and current provides added security
Applications
• Control of MOSFETs in synchronous buck converters
• Use in isolated DC-DC converters for networking systems
• Power management solutions for notebook processors
• Implementation in automation and control systems for improved performance
What is the suitability for high-temperature environments?
The device operates effectively at temperatures up to +150°C, ensuring reliability in high-heat conditions typical of power applications.
How does this product manage power dissipation?
With a maximum power dissipation of 2.5W, it balances thermal performance, decreasing the risk of overheating.
Can it handle different voltage ratings?
Yes, it can withstand a maximum drain-source voltage of 30V, making it versatile for various applications.
What is the maximum gate threshold voltage?
The maximum gate threshold voltage is 2.35V, ensuring compatibility with a range of drive circuits.
How does the low Rds(on) impact its performance?
The low drain-source on-resistance minimises conduction losses, enhancing efficiency and reducing heat generation during operation.