Infineon HEXFET N-Channel MOSFET, 160 A, 30 V, 3-Pin IPAK IRLU8743PBF
- RS Stock No.:
- 495-760
- Mfr. Part No.:
- IRLU8743PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£4.68
(exc. VAT)
£5.615
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 145 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.936 | £4.68 |
| 50 - 120 | £0.844 | £4.22 |
| 125 - 245 | £0.786 | £3.93 |
| 250 - 495 | £0.73 | £3.65 |
| 500 + | £0.674 | £3.37 |
*price indicative
- RS Stock No.:
- 495-760
- Mfr. Part No.:
- IRLU8743PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 160 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | IPAK (TO-251) | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 135 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 39 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Width | 2.39mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 6.22mm | |
| Forward Diode Voltage | 1V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 160 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type IPAK (TO-251) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 135 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 39 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Width 2.39mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 6.22mm | ||
Forward Diode Voltage 1V | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLU8743PBF
This MOSFET is an enhancement mode device designed for efficient switching applications. It utilises advanced technology to perform well in high-frequency operations, making it suitable for power management in various industrial scenarios. With impressive specifications, it effectively manages significant current loads while maintaining low resistance, ensuring performance in various conditions.
Features & Benefits
• Low on-resistance reduces power loss during operation
• High continuous drain current of 160A supports substantial loads
• Voltage range up to 30V facilitates diverse applications
• Designed with an IPAK TO-251 package for straightforward installation
• Fully characterised avalanche capabilities enhance operational reliability
• High continuous drain current of 160A supports substantial loads
• Voltage range up to 30V facilitates diverse applications
• Designed with an IPAK TO-251 package for straightforward installation
• Fully characterised avalanche capabilities enhance operational reliability
Applications
• High-frequency synchronous buck converters
• Isolated DC-DC converters in industrial environments
• Computer processor power management systems
• High current power supply
• Isolated DC-DC converters in industrial environments
• Computer processor power management systems
• High current power supply
How does it perform in high-temperature environments?
The device operates within a temperature range of -55°C to +175°C, ensuring consistent performance in extreme conditions.
What is the significance of low RDS(on) for my design?
A low RDS(on) value minimises conduction losses, promoting efficient energy use and effective thermal management, which is essential for high-current applications.
Can it be used in pulse applications?
Yes, its design supports pulsed current handling, making it suitable for various applications requiring transient response.
What factors should I consider during installation?
It is important to ensure proper thermal management and verify compatibility with the circuit's voltage and current specifications to optimise performance.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
