N-Channel MOSFET Transistor, 18 A, 100 V, 8-Pin SOP Advanced Toshiba TPCA8006-H(TE12L,Q,M)
- RS Stock No.:
- 415-376
- Mfr. Part No.:
- TPCA8006-H(TE12L,Q,M)
- Brand:
- Toshiba
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 415-376
- Mfr. Part No.:
- TPCA8006-H(TE12L,Q,M)
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOP Advanced | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 67 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 45 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Width | 5mm | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.95mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOP Advanced | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 67 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 45 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Width 5mm | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 0.95mm | ||
MOSFETs - N-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.