Infineon IGT65 GaN N-Channel MOSFET Transistor, 31 A, 650 V, 8-Pin PG-HSOF-8 IGT65R055D2ATMA1
- RS Stock No.:
- 351-966
- Mfr. Part No.:
- IGT65R055D2ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£6.17
(exc. VAT)
£7.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 03 March 2026
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Units | Per unit |
|---|---|
| 1 - 9 | £6.17 |
| 10 - 99 | £5.55 |
| 100 - 499 | £5.12 |
| 500 - 999 | £4.75 |
| 1000 + | £4.26 |
*price indicative
- RS Stock No.:
- 351-966
- Mfr. Part No.:
- IGT65R055D2ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | IGT65 | |
| Package Type | PG-HSOF-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | GaN | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 650 V | ||
Series IGT65 | ||
Package Type PG-HSOF-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material GaN | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon CoolGaN is a highly efficient gallium nitride (GaN) transistor designed for power conversion. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial applications.
Enhancement mode transistor
Ultra fast switching
No reverse recovery charge
Capable of reverse conduction
Low gate and output charge
Superior commutation ruggedness
Ultra fast switching
No reverse recovery charge
Capable of reverse conduction
Low gate and output charge
Superior commutation ruggedness
